Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-11-08
2008-09-02
Le, Dung A. (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S140000, C438S139000, C438S508000, C257S409000
Reexamination Certificate
active
07419877
ABSTRACT:
Edge termination for silicon carbide devices has a plurality of concentric floating guard rings in a silicon carbide layer that are adjacent and spaced apart from a silicon carbide-based semiconductor junction. An insulating layer, such as an oxide, is provided on the floating guard rings and a silicon carbide surface charge compensation region is provided between the floating guard rings and is adjacent the insulating layer. Methods of fabricating such edge termination are also provided.
REFERENCES:
patent: 3047439 (1962-07-01), Van Daal et al.
patent: 3121829 (1964-02-01), Huizing et al.
patent: 3628187 (1971-12-01), DeLoach, Jr. et al.
patent: 4096622 (1978-06-01), MacIver
patent: 4329699 (1982-05-01), Ishihara et al.
patent: 4607270 (1986-08-01), Iesaka
patent: 4638551 (1987-01-01), Einthoven
patent: 4720734 (1988-01-01), Amemiya et al.
patent: 4738937 (1988-04-01), Parsons
patent: 4742377 (1988-05-01), Einthoven
patent: 4762806 (1988-08-01), Suzuki et al.
patent: 4765845 (1988-08-01), Takada et al.
patent: 4816879 (1989-03-01), Ellwanger
patent: 4866005 (1989-09-01), Davis et al.
patent: 4875083 (1989-10-01), Palmour
patent: 4901120 (1990-02-01), Weaver et al.
patent: 4907040 (1990-03-01), Kobayashi et al.
patent: 4918497 (1990-04-01), Edmond
patent: 5471072 (1995-11-01), Papanicolaou
patent: 5712502 (1998-01-01), Mitlehner
patent: 5789311 (1998-08-01), Ueno et al.
patent: 5801836 (1998-09-01), Bakowski et al.
patent: 5907179 (1999-05-01), Losehand et al.
patent: 5914500 (1999-06-01), Bakowski et al.
patent: 5932894 (1999-08-01), Bakowski et al.
patent: 5977605 (1999-11-01), Bakowsky et al.
patent: 5994189 (1999-11-01), Akiyama
patent: 6002159 (1999-12-01), Bakowski et al.
patent: 6005261 (1999-12-01), Konstantinov
patent: 6040237 (2000-03-01), Bakowski et al.
patent: 6083814 (2000-07-01), Nilsson et al.
patent: 6110813 (2000-08-01), Ota et al.
patent: 6191015 (2001-02-01), Losehand et al.
patent: 6313482 (2001-11-01), Baliga
patent: 6320205 (2001-11-01), Pfirsch et al.
patent: 6445054 (2002-09-01), Traijkovic et al.
patent: 6573128 (2003-06-01), Singh
patent: 6831345 (2004-12-01), Kinoshita et al.
patent: 7166894 (2007-01-01), Templier et al.
patent: 2003/0160274 (2003-08-01), Das et al.
patent: 2004/0238903 (2004-12-01), Zeng et al.
patent: 1076363 (2001-02-01), None
patent: 1111688 (2001-06-01), None
patent: 58-148469 (1983-03-01), None
patent: 62-279672 (1988-06-01), None
patent: 63-133569 (1988-06-01), None
patent: 3147331 (1991-06-01), None
patent: WO96/03774 (1996-02-01), None
patent: WO97/08754 (1997-03-01), None
patent: WO 01/86727 (2001-11-01), None
patent: WO 03/077321 (2003-09-01), None
patent: WO 2004/066392 (2004-08-01), None
Notification of International Search Report and Written Opinion for PCT/US2007/000471; date of mailing May 31, 2007.
Kinoshita et al. “Guard Ring Assisted RESURF: A New Termination Structure Providing Stable and High Breakdown Voltage for SiC Power Devices,”Tech. Digest of ISPSD '02, pp. 253-256.
International Search Report and Written Opinion of the International Searching Authority for corresponding PCT application No. PCT/US2004/001183, mailed Jul. 7, 2004.
Onose et al.Over 2000 V FLR Termination Technologies for SiC High Voltage Devices, 12th International Symposium on Power Semiconductor Devices and IC's. Toulousse, France, May 22-25, 2000.
Kosiachenko, L.A. and E.F. Kukhta, V.M. Skiliarchuk, “Light Emission from Metal at Forward Bias of a Shottky Diode,”Zhurnal tekhnicheskoi fiziki [Journal of Technical Physics], vol. 54, No. 6, 1984.
Kyoritsu Shuppan Kabushiki Kaisha,Crystallography Handbook, date is unknown.
The Electrical Engineering Handbook, Richard C. Dorf, editor, Second Edition, CRC/IEEE Press, date is unknown.
Sze, S.M.Physics of Semiconductor Devices, John Wiley & Sons, p. 250-254, date is unknown.
Streetman, B.G.Solid State Electronic Devices. Second Edition, Prentice-Hall, 1980, pp. 192-193, 201, 443.
Saidov, M.S., Kh. A. Shamuratov, and A. Umurzakov. “Current-voltage characteristics of silicon carbide heterojunctions.”Soviet Physics of Semiconductors. vol. 13, No. 9, Sep. 1979, pp. 1054-1056.
Pelletier, J., D. Gervais, and C. Pomot. “Application of Wide Gap Semiconductors to Surface Ionization: Work Functions of AIN and SiC Crystals.”Journal of Applied Physics. vol. 55, No. 4, Feb. 15, 1984, pp. 994-1002.
Edmond, J.A., J. Ryu, J.T. Glass, and R.F. Davis. “Electrical Contacts to Beta Silicon Carbide Thin Films.”Journal of the Electromechanical Society. vol. 135, No. 2, Feb. 1988, pp. 359-362.
Waldrop, J.R. and R.W. Grant. “Formation and Schottky barrier height of metal contacts to β-SiC.”Applied Physics Letters. vol. 56, No. 6, Feb. 5, 1990, pp. 557-559.
Ioannou, D.E. and N.A. Papanicolaou. “Deep Level Transient Spectroscopy of β-SiC Layers.”Abstracts. Fourth National Review Meeting On Growth and Characterization of SiC and Its Employment in Semiconductor Applications, date is unknown.
Anikin, M.M. et al. “Electrostatic properties of SiC-6H structures with an abrupt pin junction.”Soviet Physics Semiconductors.Jan. 1988, vol. 22(1): pp. 80-83.
Glover, G.H. “Charge Multiplication in Au-SiC (6H) Schottky Junctions.”Journal of Applied Physics. Nov. 1975, vol. 46, No. 11: pp. 4842-4844.
Ioannou et al. “The Effect of Heat Treatment on Au Schottky Contacts on β-SiC.”IEEE Transactions on Electron Devices. Aug. 1979, vol. Ed-34, No. 8: pp. 1694-1699.
Violin, E.E., et al. “Light Emitting Devices Based on Silicon Carbide.”Silicon Carbide. 1973. p. 565. (edited by Marshall, Faust, Ryan).
Powell, J.A. “Silicon Carbide: Progress in Crystal Growth.”Material Research Society Symposium Proceedings. 1987. vol. 97: pp. 159-168.
Konstantinov, A.O. “Ionization Rates and Critical Fields in 4H Silicon Carbide,”Appl. Phys. Lett. vol. 71, No. 1, Jul. 1997, pp. 90-92.
Appels et al. “High-voltage thin layer devices (RESURF devices),”IEDM Tech. Dig., 1979, pp. 238-241.
Li et al. “Theoretical and Experimental Study of 4H-SiC Junction Edge Termination,”Materials Science Forum, vols. 338-342 (2000), pp. 1375-1378.
Merchant et al. “Realization of High Breakdown Voltage (>700V) in Thin SOI Devices,”Tech. Digest of ISPSD '91, pp. 31-34.
Yilmaz, Hamza, “Optimization and Surface Charge Sensitivity of High Voltage Blocking Structures with Shallow Junctions,”IEEE Transactions on Electron Devices, vol. 38, No. 3, Jul. 1991, pp. 1666-1675.
Katsunori Ueno, Tatsue Urushidani, Kouichi Hahimoto, and Yasukazu Seki. “The Guard -Ring Termination for the High-Voltage SiC Schottky Barrier Diodes.”IEEE Electron Device Letters.vol. 16, No. 7, Jul. 1995.
Singh, R. and J.W. Palmour, “Planar Terminations in 4H-SiC Schottky Diodes with Low Leakage and High Yields,”IEEE International Symposium on Power Semiconductor Devices and ICs, 1997.
Agarwal Anant K.
Ryu Sei-Hyung
Cree Inc.
Le Dung A.
Myers Bigel Sibley & Sajovec P.A.
LandOfFree
Methods of fabricating silicon carbide devices including... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Methods of fabricating silicon carbide devices including..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods of fabricating silicon carbide devices including... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3965667