Method of making a multiple crystal orientation...

Details Method of making a multiple crystal orientation... Method of making a multiple crystal orientation...

2006-03-30

2008-07-22

Kebede, Brook (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S226000, C257SE21632

Reexamination Certificate

active

07402477

ABSTRACT:
A method of having transistors formed in enhanced performance crystal orientations begins with a wafer having a semiconductor substrate (12,52) of a first surface orientation, a thin etch stop layer (14,54) on the semiconductor substrate, a buried oxide layer (16,56) on the thin etch stop layer, and a semiconductor layer (18,58) of a second surface orientation on the buried oxide layer. An etch penetrates to the thin etch stop layer. Another etch, which is chosen to minimize the damage to the underlying semiconductor substrate, exposes a portion of the semiconductor substrate. An epitaxial semiconductor (28,66) is then grown from the exposed portion of the semiconductor substrate to form a semiconductor region having the first surface orientation and having few, if any, defects. The epitaxially grown semiconductor region is then used for enhancing one type of transistor while the semiconductor layer of the second surface orientation is used for enhancing a different type of transistor.

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