Structure and method for a sidewall SONOS memory device

Details Structure and method for a sidewall SONOS memory device Structure and method for a sidewall SONOS memory device

2008-07-29

2008-07-29

Smoot, Stephen W (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S287000, C438S303000, C438S954000, C257SE21626

Reexamination Certificate

active

11327185

ABSTRACT:
A system and method for a sidewall SONOS memory device is provided. An electronic device includes a non-volatile memory. A substrate includes source/drain regions. A gate stack is directly over the substrate and between the source/drain regions. The gate stack has a sidewall. A nitride spacer is formed adjacent to the gate stack. A first oxide material is formed directly adjacent the spacer. An oxide-nitride-oxide structure is formed between the spacer and the gate stack. The oxide-nitride-oxide structure has a generally L-shaped cross-section on at least one side of the gate stack. The oxide-nitride-oxide structure includes a vertical portion and a horizontal portion. The vertical portion is substantially aligned with the sidewall and located between the first oxide material and the gate sidewall. The horizontal portion is substantially aligned with the substrate and located between the first oxide and the substrate.

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patent: 2004/0005761 (2004-01-01), Shibata
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