Semiconductor device manufacturing: process – Chemical etching
Reexamination Certificate
2008-05-06
2008-05-06
Tran, Binh X. (Department: 1792)
Semiconductor device manufacturing: process
Chemical etching
C438S673000, C438S595000, C438S692000, C438S696000, C438S697000, C257S622000, C257S798000, C257S797000
Reexamination Certificate
active
11182066
ABSTRACT:
The present invention relates to a method for producing a structure serving as an etching mask on the surface of a substrate. In this case, a first method involves forming a first partial structure on the surface of the substrate, which has structure elements that are arranged regularly and are spaced apart essentially identically. A second method involves forming spacers on the surface of the substrate, which adjoin sidewalls of the structure elements of the first partial structure, cutouts being provided between the spacers. A third method step involves introducing filling material into the cutouts between the spacers, a surface of the spacers being uncovered. A fourth method step involves removing the spacers in order to form a second partial structure having the filling material and having structure elements that are arranged regularly and are spaced apart essentially identically. The structure to be produced is composed of the first partial structure and the second partial structure.
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German Office Action dated Feb. 4, 2005, directed to counterpart German application.
Moll Peter
Nölscher Christoph
Temmler Dietmar
Angadi Maki
Infineon - Technologies AG
Patterson & Sheridan L.L.P.
Tran Binh X.
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