Shrinking contact apertures through LPD oxide

Details Shrinking contact apertures through LPD oxide Shrinking contact apertures through LPD oxide

2008-07-01

2008-07-01

Nguyen, Thanh (Department: 2813)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S639000, C438S622000, C257SE21577

Reexamination Certificate

active

11163786

ABSTRACT:
Sublithographic contact apertures through a dielectric are formed in a stack of dielectric, hardmask and oxide-containing seed layer. An initial aperture through the seed layer receives a deposition of oxide by liquid phase deposition, which adheres selectively to the exposed vertical walls of the aperture in the seed layer. The sublithographic aperture, reduced in size by the thickness of the added material, defines a reduced aperture in the hardmask. The reduced hardmask then defines the sublithographic aperture through the dielectric.

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