Method for using negative tone silicon-containing resist for...

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Radiation sensitive composition or product or process of making

Reexamination Certificate

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C430S325000, C430S905000

Reexamination Certificate

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11552677

ABSTRACT:
The negative resist compositions especially suitable for electron beam-based lithographic processes are obtained by using a polymeric component containing first silsesquioxane moieties functionalized with a first reactive group having a first crosslinking reactivity and a first dissolution rate in aqueous alkaline solutions, and second silsesquioxane moieties functionalized with a second reactive group having a second crosslinking reactivity and a second dissolution rate in aqueous alkaline solutions, said reactivities being different from one another and said dissolution rates being different from one another. These negative resists enable improved negative lithographic processes, especially in the context of mask-making and direct-write techniques using electron beam lithography. The negative resists are also useful more generally in methods of forming patterned material features and advantageously show reduced incidence of image collapse at smaller groundrules.

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patent: 6803171 (2004-10-01), Gronbeck et al.
patent: 6842577 (2005-01-01), Shelnut et al.
patent: 2003/0224560 (2003-12-01), Odaka et al.
patent: 2004/0209187 (2004-10-01), Barclay et al.
patent: 2004/0265754 (2004-12-01), Barclay et al.
patent: 2007/0281098 (2007-12-01), Hirayama et al.

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