Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2008-03-25

2008-03-25

Wilczewski, Mary (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257S261000

Reexamination Certificate

active

11454587

ABSTRACT:
A semiconductor device and a method of manufacturing the same, wherein first and second gate electrodes are formed to have a spacer shape. The length of an underlying dielectric film can be automatically controlled. A gate oxide film and a third gate electrode are formed between the first and second gate electrodes. Voids are not generated when burying the third conductive film. A thickness and width of the gate oxide film can be freely controlled.

REFERENCES:
patent: 6329248 (2001-12-01), Yang
patent: 6734066 (2004-05-01), Lin et al.
patent: 2004-0043284 (2004-05-01), None

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