Selective etching of organosilicate films over silicon oxide...

Details Selective etching of organosilicate films over silicon oxide... Selective etching of organosilicate films over silicon oxide...

2007-02-27

2007-02-27

Smith, Matthew (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S700000, C438S709000

Reexamination Certificate

active

09912103

ABSTRACT:
A method of selectively etching organosilicate layers in integrated circuit fabrication processes is disclosed. The organosilicate layers are selectively etched using a hydrogen-containing fluorocarbon gas. The hydrogen-containing fluorocarbon gas may be used to selectively etch an organosilicate layer formed on a silicon oxide stop etch layer when fabricating a damascene structure.

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