Method of forming a memory cell having self-aligned contact...

Details Method of forming a memory cell having self-aligned contact... Method of forming a memory cell having self-aligned contact...

2007-05-01

2007-05-01

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S259000, C438S270000, C438S299000, C438S296000, C438S298000, C438S306000, C438S307000, C438S308000, C438S309000, C438S310000, C438S311000, C257SE21659, C257SE21660, C257SE21613

Reexamination Certificate

active

11141312

ABSTRACT:
A memory cell of a semiconductor device and a method for forming the same, wherein the memory cell includes a substrate having active regions and field regions, a gate layer formed over the substrate, the gate layer including a plurality of access gates formed over the active regions of the substrate and a plurality of pass gates formed over the field regions of the substrate, first self-aligned contact regions formed between adjacent pass gates and access gates, and second self-aligned contact regions formed between adjacent access gates, wherein a width of each of the first self-aligned contact regions is larger than a width of each of the second self-aligned contact regions.

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