Interlayer dielectric for charge loss improvement

Details Interlayer dielectric for charge loss improvement Interlayer dielectric for charge loss improvement

2007-11-27

2007-11-27

Sarkar, Asok K. (Department: 2891)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Multiple layers

C438S778000, C438S699000, C438S786000, C257SE21209

Reexamination Certificate

active

11147208

ABSTRACT:
A method of manufacturing a memory device includes forming a first dielectric layer over a substrate and forming a charge storage element over the first dielectric layer. The method also includes forming a second dielectric layer over the charge storage element and forming a control gate over the second dielectric layer. The method further includes depositing an interlayer dielectric over the control gate at a high temperature.

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