Semiconductor device for reducing photovolatic current

Details Semiconductor device for reducing photovolatic current Semiconductor device for reducing photovolatic current

2007-07-03

2007-07-03

Ha, Nathan W. (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

Reexamination Certificate

active

11003279

ABSTRACT:
A semiconductor device that has a common border between P and N wells is susceptible to photovoltaic current that is believed to be primarily generated from photons that strike this common border. Photons that strike the border are believed to create electron/hole pairs that separate when created at the PN junction of the border. The photovoltaic current can have a sufficient current density to be destructive to the metal connections to a well if the area of these metal connections to the well is small relative to the length of the border. This photovoltaic current can be reduced below destructive levels by covering the common border sufficiently to reduce the number of photons hitting the common border. The surface area of the connections can also be increased to alleviate the problem.

REFERENCES:
patent: 4786611 (1988-11-01), Pfiester
patent: 2001/0052623 (2001-12-01), Kameyama et al.
patent: 2006/0125017 (2006-06-01), Liu

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