Deposition of tensile and compressive stressed materials

Details Deposition of tensile and compressive stressed materials Deposition of tensile and compressive stressed materials

2007-07-24

2007-07-24

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

By reaction with substrate

C438S706000, C438S791000, C438S792000, C438S763000, C438S703000, C438S776000, C257SE21269, C257SE21293

Reexamination Certificate

active

11134981

ABSTRACT:
A method of depositing tensile or compressively stressed silicon nitride on a substrate is described. Silicon nitride having a tensile stress with an absolute value of at least about 1200 MPa can be deposited from process gas comprising silicon-containing gas and nitrogen-containing gas, maintained in an electric field having a strength of from about 25 V/mil to about 300 V/mil. The electric field is formed by applying a voltage at a power level of less than about 60 Watts across electrodes that are spaced apart by a separation distance that is at least about 600 mils. Alternatively, silicon nitride having a compressive stress with an absolute value of at least about 2000 MPa can be formed in an electric field having a strength of from about 400 V/mil to about 800 V/mil.

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