Methods of forming semiconductor constructions comprising...

Details Methods of forming semiconductor constructions comprising... Methods of forming semiconductor constructions comprising...

2007-09-11

2007-09-11

Estrada, Michelle (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S386000, C438S393000, C438S396000, C257SE23077, C257SE23132, C257SE23134

Reexamination Certificate

active

11064163

ABSTRACT:
The invention includes semiconductor constructions comprising dielectric materials which contain cerium oxide and titanium oxide. The dielectric materials can contain a homogeneous distribution of cerium oxide and titanium oxide, and/or can contain a laminate of cerium oxide and titanium oxide. The dielectric materials can be incorporated into any suitable semiconductor devices, including, for example, capacitor devices, transistor devices, and flash memory devices. The invention also includes methods of utilizing atomic layer deposition to form laminates of cerium oxide and titanium oxide.

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