Methods of forming capacitors and electronic devices

Details Methods of forming capacitors and electronic devices Methods of forming capacitors and electronic devices

2007-09-18

2007-09-18

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S250000, C438S393000

Reexamination Certificate

active

11050088

ABSTRACT:
A method of forming a capacitor includes forming a first conductive capacitor electrode layer over a substrate. The first electrode layer has an outer surface comprising a noble metal in at least one of elemental and alloy forms. A gaseous mixture comprising a metallorganic deposition precursor and an organic solvent is fed to the outer surface under conditions effective to deposit a capacitor dielectric layer onto the outer surface. A conductive capacitor electrode layer is formed over the capacitor dielectric layer. A method of forming an electronic device includes forming a conductive layer over a substrate. The conductive layer has an outer surface comprising a noble metal in at least one of elemental and alloy forms. A gaseous mixture comprising a metallorganic deposition precursor and an organic solvent is fed to the outer surface under conditions effective to deposit a dielectric layer onto the outer surface.

REFERENCES:
patent: 6790677 (2004-09-01), Yamawaki
patent: 2001/0050391 (2001-12-01), Matsuno et al.
patent: 2004/0014316 (2004-01-01), Nakamura
patent: 2004/0161532 (2004-08-01), Kloster et al.
patent: 2004/0182313 (2004-09-01), Yamawaki

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