Methods of forming field effect transistors having recessed...

Details Methods of forming field effect transistors having recessed... Methods of forming field effect transistors having recessed...

2007-07-24

2007-07-24

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S270000, C438S585000, C438S589000, C257SE21428

Reexamination Certificate

active

11109292

ABSTRACT:
Methods of forming field effect transistors include the steps of forming a first electrically insulating layer on a semiconductor substrate having a plurality of trench isolation regions therein that define an active region therebetween. The first electrically insulating layer is then patterned to define a first plurality of openings therein that extend opposite the active region. A trench mask having a second plurality of openings therein is then formed by filling the first plurality of openings with electrically insulating plugs and then etching the patterned first electrically insulating layer using the electrically insulating plugs as an etching mask. A plurality of trenches are then formed in the active region by etching the semiconductor substrate using the trench mask as an etching mask. A plurality of insulated gate electrodes are then formed that extend into the plurality of trenches.

REFERENCES:
patent: 2004/0126948 (2004-07-01), Lee
patent: 2005/0079661 (2005-04-01), Cho et al.
patent: 2005/0133836 (2005-06-01), Seo et al.
patent: 11074527 (1999-03-01), None
patent: 2001015591 (2001-01-01), None

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