Method of manufacturing flash memory device

Details Method of manufacturing flash memory device Method of manufacturing flash memory device

2007-01-02

2007-01-02

Smith, Bradley K. (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S264000, C257S317000, C257S321000, C257SE21681

Reexamination Certificate

active

11146168

ABSTRACT:
A method of manufacturing a flash memory device, including the steps of forming a floating gate electrode that is a doped polysilicon film on a semiconductor substrate, forming a polysilicon layer in the pattern of HSG on the doped polysilicon film, conducting a nitrifying process after forming the HSG polysilicon layer, forming an Al2O3film on the resultant structure treated by the nitrifying process, and forming a control gate electrode on the Al2O3film.

REFERENCES:
patent: 4747367 (1988-05-01), Posa
patent: 5089867 (1992-02-01), Lee
patent: 5753559 (1998-05-01), Yew et al.
patent: 5972750 (1999-10-01), Shirai et al.
patent: 6259130 (2001-07-01), Wu
patent: 6297095 (2001-10-01), Muralidhar et al.
patent: 6396099 (2002-05-01), Joo et al.
patent: 6444545 (2002-09-01), Sadd et al.
patent: 6703708 (2004-03-01), Werkhoven et al.
patent: 6759296 (2004-07-01), Kwak et al.
patent: 6831315 (2004-12-01), Raaijmakers et al.
patent: 2002/0076883 (2002-06-01), Tseng
patent: 2003/0116795 (2003-06-01), Joo
patent: 2003/0119334 (2003-06-01), Kwak et al.
patent: 2003/0201489 (2003-10-01), Huang
patent: 2004/0011279 (2004-01-01), Joo
patent: 2004/0152260 (2004-08-01), Rabkin et al.
patent: 1019940006703 (1994-07-01), None
patent: 2002-0007862 (2002-01-01), None
S. Wolf and R.N. Tauber, Silicon Processing, 1986, Lattice Press, vol. 1, pp. 191-194 and 514-518.
Official Action in Counterpart Korean Application No. 2004-78292 dated Jan. 31, 2006.

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