Semiconductor fabrication that includes surface tension control

Details Semiconductor fabrication that includes surface tension control Semiconductor fabrication that includes surface tension control

2007-05-08

2007-05-08

Ho, Tu-Tu (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S300000, C438S239000, C438S238000, C438S706000, C438S705000

Reexamination Certificate

active

10789800

ABSTRACT:
In one embodiment, a method includes providing a semiconductor substrate that includes a memory container having a double-sided capacitor. The method also includes vapor phase etching a layer adjacent to the side wall of the memory container with a vapor having a surface tension lowering agent.

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