Semiconductor device and method for fabricating the same

Details Semiconductor device and method for fabricating the same Semiconductor device and method for fabricating the same

2007-05-29

2007-05-29

Geyer, Scott B. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S305000, C257SE21644

Reexamination Certificate

active

11066222

ABSTRACT:
The semiconductor device comprises gate electrodes50formed on a silicon substrate32with a gate insulation film48formed therebetween, source/drain diffused layers66n,66pformed in the silicon substrate32on both sides of the gate electrodes50, a skirt-like insulation film58formed on a lower part of the side wall of the gate electrode50and on the side end of the gate insulation film48, and a sidewall insulation film60formed on the exposed part of the side wall of the gate electrode50, which is not covered with the skirt-like insulation film58and the side surface of the shirt-like insulation film58.

REFERENCES:
patent: 6551887 (2003-04-01), Kwon et al.
patent: 6746927 (2004-06-01), Kammler et al.
patent: 7-307465 (1995-11-01), None

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