Methods for integrating replacement metal gate structures

Details Methods for integrating replacement metal gate structures Methods for integrating replacement metal gate structures

2007-05-15

2007-05-15

Chaudhari, Chandra (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S275000, C438S926000

Reexamination Certificate

active

10748383

ABSTRACT:
Methods and associated structures of forming a microelectronic device are described. Those methods comprise providing a substrate comprising a first transistor structure comprising an n-type gate material and second transistor structure comprising a p-type gate material, selectively removing the n-type gate material to form a recess in the first gate structure, and then filling the recess with an n-type metal gate material.

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Int'l Application No.: PCT/US2004/043239 Int'l Preliminary Repot on Patentability Chapter 1 dated Jul. 13, 2006.

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