Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-09-11
2007-09-11
Mulpuri, Savitri (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S243000, C438S386000, C257SE21648
Reexamination Certificate
active
11480089
ABSTRACT:
A method of forming a plurality of capacitors includes providing a plurality of capacitor electrodes comprising sidewalls. The plurality of capacitor electrodes are supported at least in part with a retaining structure which engages the sidewalls, with the retaining structure comprising a fluid pervious material. A capacitor dielectric material is deposited over the capacitor electrodes through the fluid pervious material of the retaining structure effective to deposit capacitor dielectric material over portions of the sidewalls received below the retaining structure. Capacitor electrode material is deposited over the capacitor dielectric material through the fluid pervious material of the retaining structure effective to deposit capacitor electrode material over at least some of the capacitor dielectric material received below the retaining structure. Integrated circuitry independent of method of fabrication is also contemplated.
REFERENCES:
patent: 5236860 (1993-08-01), Fazan et al.
patent: 5340763 (1994-08-01), Dennison
patent: 5401681 (1995-03-01), Dennison
patent: 5498562 (1996-03-01), Dennison et al.
patent: 5604696 (1997-02-01), Takaishi
patent: 5605857 (1997-02-01), Jost et al.
patent: 5652164 (1997-07-01), Dennison et al.
patent: 5654222 (1997-08-01), Sandhu et al.
patent: 5686747 (1997-11-01), Jost et al.
patent: 5702990 (1997-12-01), Jost et al.
patent: 5705838 (1998-01-01), Jost et al.
patent: 5767561 (1998-06-01), Frei et al.
patent: 5821140 (1998-10-01), Jost et al.
patent: 5900660 (1999-05-01), Jost et al.
patent: 5955758 (1999-09-01), Sandhu et al.
patent: 5981350 (1999-11-01), Geusic et al.
patent: 5990021 (1999-11-01), Prall et al.
patent: 6037218 (2000-03-01), Dennison et al.
patent: 6110774 (2000-08-01), Jost et al.
patent: 6133620 (2000-10-01), Uochi
patent: 6180450 (2001-01-01), Dennison
patent: 6204143 (2001-03-01), Roberts et al.
patent: 6204178 (2001-03-01), Marsh
patent: 6303956 (2001-10-01), Sandhu et al.
patent: 6323528 (2001-11-01), Yamazaki et al.
patent: 6383861 (2002-05-01), Gonzalez et al.
patent: 6403442 (2002-06-01), Reinberg
patent: 6432472 (2002-08-01), Farrell et al.
patent: 6458925 (2002-10-01), Fasano
patent: 6459138 (2002-10-01), Reinberg
patent: 6617222 (2003-09-01), Coursey
patent: 6667502 (2003-12-01), Agarwal et al.
patent: 6673693 (2004-01-01), Kirchhoff
patent: 6709978 (2004-03-01), Geusic et al.
patent: 6812513 (2004-11-01), Geusic et al.
patent: 6844230 (2005-01-01), Reinberg
patent: 6927122 (2005-08-01), Geusic et al.
patent: 7042040 (2006-05-01), Horiguchi
patent: 7073969 (2006-07-01), Kamm
patent: 7074669 (2006-07-01), Iijima et al.
patent: 7081384 (2006-07-01), Birner et al.
patent: 7084451 (2006-08-01), Forbes et al.
patent: 7125781 (2006-10-01), Manning et al.
patent: 7179706 (2007-02-01), Patraw et al.
patent: 2001/0012223 (2001-08-01), Kohyama
patent: 2001/0026974 (2001-10-01), Reinberg
patent: 2002/0030221 (2002-03-01), Sandhu et al.
patent: 2002/0039826 (2002-04-01), Reinberg
patent: 2002/0086479 (2002-07-01), Reinberg
patent: 2002/0090779 (2002-07-01), Jang
patent: 2002/0098654 (2002-07-01), Durcan et al.
patent: 2002/0153614 (2002-10-01), Ema et al.
patent: 2002/0163026 (2002-11-01), Park
patent: 2003/0153146 (2003-08-01), Won et al.
patent: 2003/0178684 (2003-09-01), Nakamura
patent: 2003/0190782 (2003-10-01), Ko et al.
patent: 2003/0227044 (2003-12-01), Park
patent: 2004/0056295 (2004-03-01), Agarwal et al.
patent: 2004/0188738 (2004-09-01), Farnworth et al.
patent: 2005/0051822 (2005-03-01), Manning
patent: 2005/0054159 (2005-03-01), Manning et al.
patent: 2005/0158949 (2005-07-01), Manning
patent: 2005/0287780 (2005-12-01), Manning et al.
patent: 2006/0014344 (2006-01-01), Manning
patent: 2006/0045420 (2006-03-01), Manning
patent: 2006/0051918 (2006-03-01), Busch et al.
patent: 2006/0115951 (2006-06-01), Mosley
patent: 2006/0121672 (2006-06-01), Basceri et al.
patent: 2006/0186451 (2006-08-01), Dusberg et al.
patent: 4447804 (2002-01-01), None
patent: PCT/US2004/0027898 (2004-08-01), None
patent: US2004/027898 (2004-08-01), None
patent: US2004/040252 (2004-12-01), None
patent: WO 2005/024936 (2005-03-01), None
patent: PCT/US2006/06806 (2006-02-01), None
Banhart, “Aluminum Foams: On the Road to Real Applications”, MRS Bulletin, pp. 290-295 (Apr. 2003).
Crouse et al.,Self-Assembled Nanostructures Using Anodized Alumina Thin Films for Optoelectronic Applications, IEEE, pp. 234-235 (1999).
Gibson et al., “Cellular Solids”, MRS Bulletin, pp. 270-274 (Apr. 2003).
Green et al., “Cellular Ceramics: Intriguing Structures, Novel Properties, and Innovative Applications”, MRS Bulletin, pp. 296-300 (Apr. 2003).
Green et al., “The Structure and Applications of Cellular Ceramics”, Web Extra, 10 pages (Apr. 2003).
Karp et al., “Scaffolds for Tissue Engineering”, MRS Bulletin, pp. 301-306 (Apr. 2003).
Kim et al., “A Mechanically Enhanced Storage node for virtually unlimited Height(MESH)Capacitor Aiming at sub 70nm DRAMs”, IEEE 2004, pp. 3.4.1-3.4.4 (2004).
Konovalov et al., “Chemistry of Materials”, Chem. Mater., vol. 11, No. 8, pp. 1949-1951 (Aug. 1999).
Kraynik, “Foam Structure: From Soap Froth to Solid Foams”, MRS Bulletin, pp. 275-276 (Apr. 2003).
Liang et al., “Nonlithographic Fabrication of Lateral Superlattices for Nanometric Electromagnetic-Optic . . .” IEEE J. Selected Topics in Quantum Electr., vol. 8, No. 5, pp. 998-1008 (Sep./Oct. 2002).
Maire et al., “In Situ X-Ray Tomography Measurements of Deformation in Cellular Solids”, MRS Bulletin, pp. 284-289 (Apr. 2003).
Masuda et al., “Highly ordered nanochannel-array architecture in anodic alumina”, App. Phys. Lett, vol. 71, No. 19, pp. 2770-2772 (Nov. 1997).
Nadeem et al., “Fabrication of Microstructures Using Aluminum Anodization Techniques”, pp. 274-277 (pre-2004).
Oh et al., “Preparation and Pore-Characteristics Control of Nano-Porous Materials Using Organometallic Building Blocks”, 4 Carbon Science, No. 1, pp. 1-9 (Mar. 2003).
U.S. Appl. No. 10/928,931, filed Aug. 2004, Busch et al.
U.S. Appl. No. 11/006,331, filed Dec. 6, 2004, Basceri et al.
U.S. Appl. No. 11/083,489, filed Mar. 18, 2005, Sandhu et al.
U.S. Appl. No. 11/131,552, filed May 18, 2005, Manning.
U.S. Appl. No. 11/131,575, filed May 18, 2005, Manning et al.
U.S. Appl. No. 11/196,593, filed Aug. 3, 2005, Sandhu et al.
U.S. Appl. No. 11/272,232, filed Nov. 10, 2005, Manning et al.
U.S. Appl. No. 11/272,247, filed Nov. 10, 2005, Manning et al.
Onck, “Scale Effects in Cellular Metals”, MRS Bulletin, pp. 279-283 (Apr. 2003).
O'Sullivan et al., “The morphology and mechanism of formation of porous anodic films on aluminium”, Proc. Roy. Soc. Lond. A, vol. 317, pp. 511-543 (1970).
J.M. Park et al., “Block Copolymer Lithography: Periodic Arrays of -10″ Holes in 1 Square Centimeter” SCIENCE vol. 276, pp. 1401-1404 (May 30, 1997).
M. Park et al., “Novel Robust Cell Capacitor(Leaning Exterminated Ring Type Insulator)And New Storage Node Contact . . .”, Symposium on VLSI Technology Digest of Technical Papers, pp. 34-35 (Jul. 2004).
Shingubara, “Fabrication of nanomaterials using porous alumina templates”, J. Nanoparticle Res., vol. 5, pp. 17-30 (2003).
Tan et al., “High Aspect Ratio Microstructures on Porous Anodic Aluminum Oxide”, IEEE, pp. 267-272 (1995).
Tsukada et al., “Preparation and Application of Porous Silk Fibroin Materials”, 54 Journal of Applied Polymer Science, pp. 507-514 (1994).
U.S. Appl. No. 11/360,540, filed Feb. 2006, Rana et al.
U.S. Appl. No. 11/580,418, filed Oct. 2006, Raghu et al.
Li et al., “Metal-assisted chemical etching in HF/H2O2produces porous silicon” American Institute of Physics, vol. 77, No. 16, Oct. 16, 2000.
Basceri Cem
Sandhu Gurtej S.
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