MOS transistor having a T-shaped gate electrode

Details MOS transistor having a T-shaped gate electrode MOS transistor having a T-shaped gate electrode

2007-07-31

2007-07-31

Pham, Hoai (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S337000, C257S369000

Reexamination Certificate

active

10659384

ABSTRACT:
A MOS transistor having a T-shaped gate electrode and a method for fabricating the same are provided, wherein the MOS transistor includes a T-shaped gate electrode on a semiconductor substrate; an L-shaped lower spacer disposed at both sides of the gate electrode to cover a top surface of the semiconductor substrate; and low-, mid-, and high-concentration impurity regions formed in the semiconductor substrate of both sides of the gate electrode. The high-concentration impurity region is disposed in the semiconductor substrate next to the lower spacer and the mid-concentration impurity region is disposed between the high- and low-concentration impurity regions. A MOS transistor according to the present invention provides a decrease in a capacitance, a decrease in a channel length, and an increase in a cross-sectional area of the gate electrode. At the same time, the mid-concentration impurity region provides a decrease in a source/drain resistance Rsd.

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Ghani, T., et al., “100 nm Gate Length High Performance..”,IEDM Technical Digest, pp. 415-418 (1999).

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