Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-09-04
2007-09-04
Smith, Matthew (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S628000, C438S672000, C257SE21295, C257SE21440, C427S126500, C427S455000
Reexamination Certificate
active
11069514
ABSTRACT:
A method and apparatus for forming layers on a substrate comprising depositing a metal seed layer on a substrate surface having apertures, depositing a transition metal layer over the copper seed layer, and depositing a bulk metal layer over the transition metal layer. Also a method and apparatus for forming a via through a dielectric to reveal metal at the base of the via, depositing a transition metal layer, and depositing a first metal layer on the transition metal layer. Additionally, a method and apparatus for depositing a transition metal layer on an exposed metal surface, and depositing a layer thereover selected from the group consisting of a capping layer and a low dielectric constant layer.
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Chung Hua
Ganguli Seshadri
Marcadal Christophe
Yu Jick M.
Applied Materials Inc.
Patterson & Sheridan LLP
Pham Thanh
Smith Matthew
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