Method of manufacturing a fin field effect transistor

Details Method of manufacturing a fin field effect transistor Method of manufacturing a fin field effect transistor

2007-01-09

2007-01-09

Dang, Trung (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S284000, C257SE21178

Reexamination Certificate

active

11066703

ABSTRACT:
In an exemplary embodiment, a fin active region is protruded along one direction from a bulk silicon substrate on which a shallow trench insulator is entirely formed so as to cover the fin active region. The shallow trench insulator is removed to selectively expose an upper part and sidewall of the fin active region, along a line shape that at least one time crosses with the fin active region, thus forming a trench. The fin active region is exposed by the trench and thereon a gate insulation layer is formed. Thereby, productivity is increased and performance of the device is improved. A fin FET employs a bulk silicon substrate of which a manufacturing cost is lower than that of a conventional SOI type silicon substrate. Also, a floating body effect can be prevented, or is substantially reduced.

REFERENCES:
patent: 4996574 (1991-02-01), Shirasaki et al.
patent: 6300182 (2001-10-01), Yu
patent: 6635923 (2003-10-01), Hanafi et al.
patent: 6642090 (2003-11-01), Fried et al.
patent: 2001/0020724 (2001-09-01), Berry et al.
patent: 2002/0011612 (2002-01-01), Hieda
patent: 2003/0178677 (2003-09-01), Clark et al.
patent: 2005/0035415 (2005-02-01), Yeo et al.
patent: 2005/0056892 (2005-03-01), Seliskar

Affiliated with

Also associated with

Rating

Method of manufacturing a fin field effect transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing a fin field effect transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a fin field effect transistor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3731816