Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-08-01
2006-08-01
Smith, Matthew (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S643000, C438S902000, C257S751000
Reexamination Certificate
active
07084060
ABSTRACT:
Methods of forming a capping layer over a metal wire structure of a semiconductor device are disclosed. In one embodiment, the method includes providing a partially fabricated semiconductor device having exposed surfaces of the metal (e.g., copper) wire structure and a dielectric around the metal wire structure. The exposed surface of the metal wire structure is then activated by forming a seed layer thereon. The capping layer is then formed over the exposed surface of the metal wire structure by performing a selective atomic layer deposition (ALD) of a capping layer material onto the metal wire structure. As an alternative, the dielectric may be masked off to further assist the selectivity of the ALD. The invention also includes a semiconductor structure including the metal wire structure having an atomic layer deposition capping layer over an upper surface thereof.
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Furukawa Toshiharu
Holmes Steven J.
Horak David V.
Koburger, III Charles W.
Hoffman Warnick & D'Alessandro LLC
International Business Machines - Corporation
Jaklitsch Lisa U.
Parker John M.
Smith Matthew
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