Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-11-07
2006-11-07
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S287000, C438S264000, C438S288000, C438S151000, C438S158000, C257SE29309, C257SE21180, C257SE21423, C257SE21679
Reexamination Certificate
active
07132335
ABSTRACT:
An array of transistors includes a plurality of transistors, a plurality of word lines extending in a first direction and a plurality of bit lines extending in a second direction. Each transistor includes a source, a drain, a channel and a localized charge storage dielectric. A first transistor of the plurality of transistors and a second transistor of the plurality of transistors share a common source/drain. A first localized charge storage dielectric of the first transistor does not overlap the common source/drain and a second localized charge storage dielectric of the second transistor overlaps the common source/drain.
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Fasoli Luca
Ilkbahar Alper
Scheuerlein Roy
Walker Andrew J.
Foley & Lardner LLP
Fourson George
Sandisk 3D LLC
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