Semiconductor device with metal gate and high-k tantalum...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S785000

Reexamination Certificate

active

07060571

ABSTRACT:
Microminiaturized semiconductor devices are fabricated with a replacement metal gate and a high-k tantalum oxide or tantalum oxynitride gate dielectric with significantly reduced carbon. Embodiments include forming an opening in a dielectric layer by removing a removable gate, depositing a thin tantalum film, as by PVD at a thickness of 25 Å to 60 Å lining the opening, and then conducting thermal oxidation, as at a temperature of 100° C. to 500° C., in flowing oxygen or ozone to form a high-k tantalum oxide gate dielectric layer, or in oxygen and N2O or ozone and N2O ammonia to form a high-k tantalum oxynitride gate dielectric. Alternatively, oxidation can be conducted in an oxygen or ozone plasma to form the high-k tantalum oxide layer, or in a plasma containing N2O and oxygen or ozone to form the high-k tantalum oxynitride gate dielectric layer.

REFERENCES:
patent: 6020024 (2000-02-01), Maiti et al.
patent: 6225168 (2001-05-01), Gardner et al.
patent: 6372659 (2002-04-01), Yu
patent: 6476454 (2002-11-01), Suguro

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor device with metal gate and high-k tantalum... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device with metal gate and high-k tantalum..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device with metal gate and high-k tantalum... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3703476

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.