Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-06-13
2006-06-13
Chaudhari, Chandra (Department: 2891)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S785000
Reexamination Certificate
active
07060571
ABSTRACT:
Microminiaturized semiconductor devices are fabricated with a replacement metal gate and a high-k tantalum oxide or tantalum oxynitride gate dielectric with significantly reduced carbon. Embodiments include forming an opening in a dielectric layer by removing a removable gate, depositing a thin tantalum film, as by PVD at a thickness of 25 Å to 60 Å lining the opening, and then conducting thermal oxidation, as at a temperature of 100° C. to 500° C., in flowing oxygen or ozone to form a high-k tantalum oxide gate dielectric layer, or in oxygen and N2O or ozone and N2O ammonia to form a high-k tantalum oxynitride gate dielectric. Alternatively, oxidation can be conducted in an oxygen or ozone plasma to form the high-k tantalum oxide layer, or in a plasma containing N2O and oxygen or ozone to form the high-k tantalum oxynitride gate dielectric layer.
REFERENCES:
patent: 6020024 (2000-02-01), Maiti et al.
patent: 6225168 (2001-05-01), Gardner et al.
patent: 6372659 (2002-04-01), Yu
patent: 6476454 (2002-11-01), Suguro
Besser Paul R.
Ngo Minh Van
Pan James
Woo Christy
Yin Jinsong
Advanced Micro Devices , Inc.
Chaudhari Chandra
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