Method of forming dual damascene structure

Details Method of forming dual damascene structure Method of forming dual damascene structure

2006-08-29

2006-08-29

Estrada, Michelle (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S633000

Reexamination Certificate

active

07098130

ABSTRACT:
A method for forming dual damascene features in a dielectric layer. Vias are partially etched in the dielectric layer. A trench pattern mask is formed over the dielectric layer. Trenches are partially etched in the dielectric layer. The trench pattern mask is stripped. The dielectric layer is further etched to complete etch the vias and the trenches in the dielectric layer.

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