Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-08-29
2006-08-29
Tsai, H. Jey (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S384000, C438S385000
Reexamination Certificate
active
07098101
ABSTRACT:
A method of forming PrXCa1-xMnO3thin films having a PMO/CMO super lattice structure using metalorganic chemical vapor deposition includes preparing organometallic compounds and solvents and mixing organometallic compounds and solvents to form PMO and CMO precursors. The precursors for PMO and CMO are injected into a MOCVD chamber vaporizer. Deposition parameters are selected to form a nano-sized PCMO thin film or a crystalline PCMO thin film from the injection of PMO and CMO precursors, wherein the PMO and CMO precursors are alternately injected into the MOCVD chamber vaporizer. The selected deposition parameters are maintained to deposit the PCMO thin film species having a desired Pr:Ca concentration ratio in a specific portion of the PCMO thin film. The resultant PCMO thin film is annealed at a selected temperature for a selected time period.
REFERENCES:
patent: 6939724 (2005-09-01), Zhuang et al.
patent: 2004/0159867 (2004-08-01), Kinney et al.
U.S. Appl. No. 10/831,677, filed Apr. 23, 2004, Zhuang et al.
U.S. Appl. No. 10/836,689, filed Apr. 30, 2004, Li et al.
Charneski Lawrence J.
Hsu Sheng Teng
Li Tingkai
Sharp Laboratories of America Inc.
Tsai H. Jey
Varitz PC Robert D.
LandOfFree
Method of forming Pr x Ca 1−x MnO 3 thin films... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of forming Pr x Ca 1−x MnO 3 thin films..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming Pr x Ca 1−x MnO 3 thin films... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3695107