Semiconductor devices having dual spacers and methods of...

Details Semiconductor devices having dual spacers and methods of... Semiconductor devices having dual spacers and methods of...

2006-10-31

2006-10-31

Smith, Bradley K. (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S303000, C257SE21248

Reexamination Certificate

active

07129143

ABSTRACT:
Semiconductor devices and methods of making the same are disclosed. According to one example, a semiconductor device having dual spacer may include a semiconductor substrate, a gate oxide film and a gate poly provided in a device region of the semiconductor substrate, a halo/pocket implant region formed in a region of the semiconductor substrate by which the gate poly is defined, and an inner spacer formed at a side wall of the gate poly for defining the width of a lower portion of the gate poly. The semiconductor device may also include an outer spacer formed at the side wall of the gate poly for defining the width of an upper portion of the gate poly, source/drain regions provided on the semiconductor substrate under the gate oxide film, and a salicide film provided on surfaces of the gate poly and the source/drain region.

REFERENCES:
patent: 5668021 (1997-09-01), Subramanian et al.
patent: 5856226 (1999-01-01), Wu
patent: 5981346 (1999-11-01), Hopper
patent: 6001695 (1999-12-01), Wu
patent: 6100561 (2000-08-01), Wang et al.
patent: 6124177 (2000-09-01), Lin et al.
patent: 6214677 (2001-04-01), Lee
patent: 6562687 (2003-05-01), Deleonibus et al.
patent: 6998318 (2006-02-01), Park
patent: 2002/0025638 (2002-02-01), Yeh et al.

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