Self-passivated copper interconnect structure

Details Self-passivated copper interconnect structure Self-passivated copper interconnect structure

2006-02-07

2006-02-07

Smith, Bradley K. (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S751000, C257S750000, C438S687000

Reexamination Certificate

active

06995471

ABSTRACT:
An embodiment for a method for forming a self-passivated copper interconnect structure. An insulating layer is formed over a semiconductor structure. An opening is formed in the insulating layer. Next, we form a fill layer comprised of Cu and Ti over insulating layer. In a nitridation step, we nitridize the fill layer to form a self-passivation layer comprised of titanium nitride over the fill layer.

REFERENCES:
patent: 5391517 (1995-02-01), Gelatos et al.
patent: 5714418 (1998-02-01), Bai et al.
patent: 5728629 (1998-03-01), Mizuno et al.
patent: 5913147 (1999-06-01), Dubin et al.
patent: 6046108 (2000-04-01), Liu et al.
patent: 6387805 (2002-05-01), Ding et al.
patent: 6472231 (2002-10-01), Gabriel et al.
patent: 6693356 (2004-02-01), Jiang et al.
Adams et al. “Titanium-nitride self encapsulation of Cu and Ag films on silicon dioxide” (1997) Thin Solid Films pp. 448-454.

Affiliated with

Also associated with

Rating

Self-passivated copper interconnect structure does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Self-passivated copper interconnect structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Self-passivated copper interconnect structure will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3676757