Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-02-07
2006-02-07
Wilczewski, Mary (Department: 2822)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S230000, C438S231000, C438S305000, C438S595000
Reexamination Certificate
active
06995065
ABSTRACT:
A method for doping a polysilicon gate conductor, without implanting the substrate in a manner that would effect source/drain formation is provided. The inventive method comprises forming at least one polysilicon gate region atop a substrate; forming oxide seed spacers abutting the polysilicon gate; forming source/drain oxide spacers selectively deposited on the oxide seed spacers by liquid phase deposition, and implanting at least one polysilicon gate region, wherein the source/drain oxide spacers protect an underlying portion of the substrate. Multiple gate regions may be processed on a single substrate using conventional patterning. A block-mask provided by patterned photoresist can be used prior to implantation to pre-select the substrate area for gate conductor doping with one dopant type.
REFERENCES:
patent: 5183771 (1993-02-01), Mitsui et al.
patent: 5270233 (1993-12-01), Hamatake
patent: 5278441 (1994-01-01), Kang et al.
patent: 5286664 (1994-02-01), Horiuchi
patent: 5824578 (1998-10-01), Yang
patent: 5846857 (1998-12-01), Ju
patent: 5885874 (1999-03-01), Gardner
patent: 5907777 (1999-05-01), Joseph et al.
patent: 5908312 (1999-06-01), Cheung et al.
patent: 5976925 (1999-11-01), Cheek et al.
patent: 5989966 (1999-11-01), Huang
patent: 6080607 (2000-06-01), Chang et al.
patent: 6080629 (2000-06-01), Gardner et al.
patent: 6218224 (2001-04-01), Lukanc et al.
patent: 6316319 (2001-11-01), Ishida et al.
patent: 6335248 (2002-01-01), Mandelman et al.
patent: 6383920 (2002-05-01), Wang et al.
patent: 6406973 (2002-06-01), Lee
patent: 6432763 (2002-08-01), Yu
patent: 2002/0084493 (2002-07-01), Marshall et al.
Chou Anthony I.
Furukawa Toshiharu
Holmes Steven J.
Anderson Jay H.
International Business Machines - Corporation
Scully Scott Murphy & Presser
Thomas Toniae M.
Wilczewski Mary
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