Static information storage and retrieval – Read/write circuit – Precharge
Reexamination Certificate
2006-02-21
2006-02-21
Dinh, Son T. (Department: 2824)
Static information storage and retrieval
Read/write circuit
Precharge
C365S189070
Reexamination Certificate
active
07002861
ABSTRACT:
An improved memory device and the method for programming the same are disclosed. The memory device includes at least one memory block requiring a word line pre-charge time to be long enough to program one or more selected memory cells. A monitoring circuit is added for detecting one or more word lines to reach a predetermined threshold voltage to enable a predetermined high voltage to be supplied to one or more latches of the memory cells.
REFERENCES:
patent: 5604712 (1997-02-01), Priebe
patent: 6430088 (2002-08-01), Plants et al.
patent: 6580649 (2003-06-01), Park
Dinh Son T.
Duane Morris LLP
Taiwan Semiconductor Manufacturing Co. Ltd.
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