Memory device for controlling programming setup time

Static information storage and retrieval – Read/write circuit – Precharge

Reexamination Certificate

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C365S189070

Reexamination Certificate

active

07002861

ABSTRACT:
An improved memory device and the method for programming the same are disclosed. The memory device includes at least one memory block requiring a word line pre-charge time to be long enough to program one or more selected memory cells. A monitoring circuit is added for detecting one or more word lines to reach a predetermined threshold voltage to enable a predetermined high voltage to be supplied to one or more latches of the memory cells.

REFERENCES:
patent: 5604712 (1997-02-01), Priebe
patent: 6430088 (2002-08-01), Plants et al.
patent: 6580649 (2003-06-01), Park

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