Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-05-02
2006-05-02
Huynh, Andy (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S171000, C438S190000, C438S238000, C438S239000, C438S244000, C438S253000, C438S387000
Reexamination Certificate
active
07037772
ABSTRACT:
A decoupling capacitor is formed on a semiconductor substrate that includes a silicon surface layer. A substantially flat bottom electrode is formed in a portion of the semiconductor surface layer. A capacitor dielectric overlies the bottom electrode. The capacitor dielectric is formed from a high permittivity dielectric with a relative permittivity, preferably greater than about 5. The capacitor also includes a substantially flat top electrode that overlies the capacitor dielectric. In the preferred application, the top electrode is connected to a first reference voltage line and the bottom electrode is connected to a second reference voltage line.
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Hu Chenming
Yeo Yee-Chia
Huynh Andy
Slater & Matsil L.L.P.
Taiwan Semiconductor Manufacturing Company , Ltd.
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