Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-08-15
2006-08-15
Smith, Matthew (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S303000, C257S306000, C257S310000, C257S532000, C257SE27048, C257SE27071
Reexamination Certificate
active
07091542
ABSTRACT:
The present invention relates generally to integrated circuits, and particularly, but not by way of limitation, metal-insulator-metal (MIM) capacitors formed within a trench located within a metallization layer and in particular to MIM capacitors for Cu BEOL semiconductor devices.
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Clevenger Lawrence
Dalton Timothy
Matusiewicz Gerald
Yang Chih-Chao
Connolly Bove & Lodge & Hutz LLP
Garcia Joannie Adelle
Smith Matthew
Trepp Robert M.
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