Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-11-14
2006-11-14
Ghyka, Alexander (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S618000, C257SE21575
Reexamination Certificate
active
07135408
ABSTRACT:
A method of forming a barrier layer on the surface of an opening defined in a porous, low dielectric constant (low k), layer, has been developed. The method features the use of a two step deposition procedure using a physical vapor deposition (PVD), procedure to initially deposit a thin underlying, first component of the barrier layer, while an atomic layer deposition (ALD), procedure is then employed for deposition of an overlying second barrier layer component. The underlying, thin barrier layer component obtained via PVD procedures is comprised with the desired properties needed to interface the porous, low k layer, while the overlying barrier layer component obtained via ALD procedures exhibits excellent thickness uniformity.
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Jang Syun-Ming
Wu Zhen-Cheng
Ghyka Alexander
Haynes and Boone LLP
Taiwan Semiconductor Manufacturing Company , Ltd.
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