Resist for photolithography having reactive groups for...

Details Resist for photolithography having reactive groups for... Resist for photolithography having reactive groups for...

2006-10-24

2006-10-24

Lee, Sin (Department: 1752)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Radiation sensitive composition or product or process of making

C430S326000, C430S905000, C430S907000, C430S910000, C430S914000, C430S325000

Reexamination Certificate

active

07125640

ABSTRACT:
A photoresist contains a polymer that has no silicon-containing groups. Consequently, no expulsion of silicon-containing compounds in gaseous form occurs on exposure to short-wave radiation. The polymer is obtained by terpolymerization of a first comonomer having a group cleavable under acid catalysis, a second comonomer having an anchor group, and a monounsaturated hydrocarbon, in which individual carbon atoms of the carbon skeleton may also be replaced by oxygen, as a third comonomer. The polymer has a low glass transition temperature, and the photoresist therefore has a good layer quality on film formation and good structurability.

REFERENCES:
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patent: 6136502 (2000-10-01), Satoshi et al.
patent: 6517990 (2003-02-01), Choi et al.
patent: 2002/0150835 (2002-10-01), Nishi et al.
patent: 2003/0027075 (2003-02-01), Barclay et al.
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patent: 2003/0152864 (2003-08-01), Araki et al.
patent: 1 091 249 (2001-04-01), None
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patent: WO 01/74916 (2001-10-01), None
DERWENT English abstract for WO 01/74916 A1 (Aoyama et al.).

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