Semiconductor memory device with surface strap and method of...

Details Semiconductor memory device with surface strap and method of... Semiconductor memory device with surface strap and method of...

Filed on

2006-11-14

Date issued

2006-11-14

Examiner

Doan, Theresa T. (Department: 2814)

Patent Class

Semiconductor device manufacturing: process

SubClass

Making field effect device having pair of active regions...

SubSubClass

Having insulated gate

Other Related Categories

C438S244000

Type

Reexamination Certificate

Status

active

Patent number

07135368

Description

ABSTRACT:
A method of fabricating a semiconductor memory device, comprising recess-etching a major surface of a semiconductor substrate, thereby forming a pillar that becomes a device formation region; burying an insulation film in the recess-etched region, thereby forming a device isolation region; burying a first oxide film at a side wall of the pillar on the device isolation region; forming a second oxide film on an upper part of the pillar; and removing an upper part of the first oxide film using the second oxide film as a mask, thereby exposing an upper surface and an upper part of the side wall of the pillar; and the method, comprising forming a conductive material on the exposed upper surface and the exposed upper part of the side wall of the pillar, thereby forming a surface strap that electrically connects the capacitor and the second activation region.

REFERENCES:
patent: 5831301 (1998-11-01), Horak et al.
patent: 5977578 (1999-11-01), Tang
patent: 6664582 (2003-12-01), Fried et al.
patent: 6737316 (2004-05-01), Lee
patent: 2002/0011612 (2002-01-01), Hieda
patent: 2004/0150037 (2004-08-01), Katsumata et al.
patent: 2004/0150071 (2004-08-01), Kondo et al.
patent: 2002-118255 (2002-04-01), None

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