Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-04-18
2006-04-18
Nguyen, Cuong (Department: 2811)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S223000, C438S230000, C438S369000
Reexamination Certificate
active
07029967
ABSTRACT:
A method for forming metal silicide regions in source and drain regions (160, 170) is described. Prior to the thermal annealing of the source and drain regions (160, 170), germanium is implanted into a semiconductor substrate adjacent to sidewall structures (90, 95) formed adjacent gate structures (60, 70). The position of the implanted germanium species in the semiconductor substrate will overlap the source and drain regions (160, 170). Following thermal annealing of the source and drain regions (160, 170), the implanted germanium prevents the formation of metal silicide spikes.
REFERENCES:
patent: 6555880 (2003-04-01), Cabral et al.
patent: 2004/0023478 (2004-02-01), Samavedam et al.
Chatterjee Amitava
Crank Sue E.
Liu Kaiping
Lu Jiong-Ping
Miles Donald S.
Brady III W. James
McLarty Peter K.
Nguyen Cuong
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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