Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-03-28
2006-03-28
Chaudhari, Chandra (Department: 2891)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S978000
Reexamination Certificate
active
07018892
ABSTRACT:
In one embodiment, a semiconductor device comprises a base and a tapered wall formed on the base. The wall has a midline and also has an inner sidewall and an outer sidewall. The inner sidewall and the outer sidewall are substantially symmetrical with each other in relation to the midline. Thus, the reliability of the semiconductor capacitor structure can be improved and the throughput can be increased. Also, further scaling down of semiconductor devices can be facilitated with the principles of the present invention.
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Choi Sang-Jun
Han Jeong-Nam
Hong Chang-Ki
Shim Woo-Gwan
Chaudhari Chandra
Marger & Johnson & McCollom, P.C.
Samsung Electronics Co,. Ltd.
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