SOI structure and method of producing same

Details SOI structure and method of producing same SOI structure and method of producing same

2006-07-18

2006-07-18

Whitehead, Jr., Carl (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE27112

Reexamination Certificate

active

07078771

ABSTRACT:
A Silicon On Insulator (SOI) structure and method of producing an SOI structure that can prevent a short circuit between a Local Inter-Connect (LIC) and a well in the SOI structure is disclosed. The SOI structure includes a BOX layer of insulation material formed on a silicon substrate; an SOI layer formed on the BOX layer; a well formed within a device isolation area of the SOI layer such that its lower surface is in contact with the BOX layer; a field oxide film formed on a surface side within the well; a gate line formed across an active area on the SOI layer and a portion on the field oxide film; an N+ type source/drain area formed within the active area along both sides of the gate line to contact its lower surface with the BOX layer; an insulation layer formed on such resultant structure; and an opening part that is formed within the insulation layer. The opening part can be opened in a Full Trench (FT) structure so that the active area is partially exposed, and can be opened in a Partial Trench (PT) structure on the field oxide film so that an upper part of the gate line of an adjacent transistor is exposed. An LIC fills in the opening part within the insulation layer, and in such construction, the SOI element is designed by an FT-LIC structure where the LIC is contacted with one portion of the active area of an optional transistor, and by a PT-LIC structure where the LIC is contacted with an upper part of the gate line on the field oxide film.

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patent: 2002/0003241 (2002-01-01), Kuriyama et al.
patent: 2002/0020878 (2002-02-01), Kawanaka

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