Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2006-01-17

2006-01-17

Pham, Hoai (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S396000

Reexamination Certificate

active

06987045

ABSTRACT:
There are provided steps of forming sequentially a first conductive film, a dielectric film, and a second conductive film, that constitute a capacitor, on an insulating film, forming an upper electrode of the capacitor by etching the second conductive film while using a first resist pattern as a mask, removing the first resist pattern, forming second resist patterns, that have a width equal to or smaller than a pattern width of the upper electrode of the capacitor, on the upper electrode of the capacitor, and etching at least a part of the dielectric film and the first conductive film by using the second resist patterns as a mask, while exposing an upper surface of the upper electrode of the capacitor close to side portions by retreating side portions of the second resist patterns. Accordingly, a method of manufacturing a semiconductor device having a capacitor, that is capable of reducing a difference between a width of the upper electrode and a width of the lower electrode constituting the capacitor rather than the prior art, can be provided.

REFERENCES:
patent: 5985713 (1999-11-01), Bailey
patent: 6094335 (2000-07-01), Early
patent: 6407422 (2002-06-01), Asano et al.
patent: 6420743 (2002-07-01), Hirano et al.
patent: 10-98162 (1998-04-01), None

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