Method of making an ultrathin silicon dioxide gate with...

Details Method of making an ultrathin silicon dioxide gate with... Method of making an ultrathin silicon dioxide gate with...

2006-03-28

2006-03-28

Pham, Long (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S770000, C438S787000

Reexamination Certificate

active

07018879

ABSTRACT:
A method of making a semiconductor device having a silicon dioxide based gate with improved dielectric properties including providing a silicon based substrate having active areas defined therein. Thermally growing a silicon dioxide based gate from the silicon based substrate. Nitriding the silicon dioxide based gate to provide a nitrided silicon dioxide based gate and to increase the dielectric constant of the silicon dioxide based gate without substantially increasing thickness of the silicon dioxide based gate.

REFERENCES:
patent: 5258333 (1993-11-01), Shappir et al.
patent: 6136728 (2000-10-01), Wang

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