Method of providing a structure using self-aligned features

Details Method of providing a structure using self-aligned features Method of providing a structure using self-aligned features

2006-09-19

2006-09-19

Nguyen, Tuan H. (Department: 2813)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S687000

Reexamination Certificate

active

07109112

ABSTRACT:
In a copper plating process, a seed layer is uniformly deposited over a surface, including lining a high aspect ratio trench defined by that surface. A mask layer is provided using a process that fails to deposit in the trench. In one exemplary embodiment, the failure is due to the decrease in the isotropic flux of neutrals toward the bottom of the trench. Copper is subsequently electroplated. Because the seed layer is exposed only within the trench, copper deposits only therein. The self-aligned mask prevents plating outside of the trench. A chemical-mechanical planarization step removes the mask and the seed layer extending beyond the trench, leaving a copper structure within the trench. The structure may serve as a conductive line, an interconnect, or a capacitor plate.

REFERENCES:
patent: 5011580 (1991-04-01), Pan et al.
patent: 5071518 (1991-12-01), Pan
patent: 5242861 (1993-09-01), Inaba
patent: 5266526 (1993-11-01), Aoyama et al.
patent: 5348811 (1994-09-01), Nagao et al.
patent: 5723387 (1998-03-01), Chen
patent: 5766492 (1998-06-01), Sadahisa et al.
patent: 5821168 (1998-10-01), Jain
patent: 5930669 (1999-07-01), Uzoh
patent: 5968333 (1999-10-01), Nogami et al.
patent: 5969422 (1999-10-01), Ting et al.
patent: 6080656 (2000-06-01), Shih et al.
patent: 6083815 (2000-07-01), Tsai et al.
patent: 6136707 (2000-10-01), Cohen
patent: 6162728 (2000-12-01), Tsao et al.
patent: 6168704 (2001-01-01), Brown et al.
patent: 6187656 (2001-02-01), Lu et al.
patent: 6197688 (2001-03-01), Simpson
patent: 6207558 (2001-03-01), Singhvi et al.
patent: 6245662 (2001-06-01), Naik et al.
patent: 6251781 (2001-06-01), Zhou et al.
patent: 6291332 (2001-09-01), Yu et al.
patent: 6303498 (2001-10-01), Chen et al.
patent: 6365511 (2002-04-01), Kizilyalli et al.
patent: 6372622 (2002-04-01), Tan et al.
patent: 6391769 (2002-05-01), Lee et al.
patent: 6403481 (2002-06-01), Matsuda et al.
patent: 6413858 (2002-07-01), Chopra
patent: 6420258 (2002-07-01), Chen et al.
patent: 6420262 (2002-07-01), Farrar
patent: 6489235 (2002-12-01), Gilton et al.
patent: 6545357 (2003-04-01), Chopra
patent: 6614099 (2003-09-01), Farrar
patent: 6696746 (2004-02-01), Farrar et al.
patent: 6756301 (2004-06-01), Gilton et al.
patent: 6759330 (2004-07-01), Chopra et al.
patent: 6852618 (2005-02-01), Chopra
patent: 6946389 (2005-09-01), Farrar et al.
patent: 2002/0127845 (2002-09-01), Farrar
patent: 2002/0142583 (2002-10-01), Chopra
patent: 2004/0219738 (2004-11-01), Chopra et al.
patent: 2005/0023697 (2005-02-01), Ahn

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