Methods of fabricating self-aligned source of flash memory...

Details Methods of fabricating self-aligned source of flash memory... Methods of fabricating self-aligned source of flash memory...

2006-07-11

2006-07-11

Smith, Bradley K. (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S706000, C257SE21214

Reexamination Certificate

active

07074679

ABSTRACT:
Example methods of fabricating semiconductor devices are disclosed. One example method may include depositing an oxide layer, a first conducting layer for a floating gate, a dielectric layer, and a second conducting layer for a control gate in sequence on a semiconductor substrate including a device isolation layer; forming gates by removing some parts of the oxide layer, the first conducting layer, the dielectric layer, and the second conducting layer; forming a mask pattern for a self-aligned source over the substrate including the gates; removing the device isolation layer exposed between the gates; performing an ion implantation process; and eliminating damage generated during the ion implantation process or the removal of the device isolation layer.

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