Methods of manufacturing ferroelectric capacitors for...

Details Methods of manufacturing ferroelectric capacitors for... Methods of manufacturing ferroelectric capacitors for...

2006-05-16

2006-05-16

Schillinger, Laura M (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S253000, C438S395000

Reexamination Certificate

active

07045416

ABSTRACT:
Methods of forming integrated circuit capacitors having dielectric layers therein that comprise ferroelectric materials, include the use of protective layers to block the infiltration of hydrogen into the ferroelectric material. By blocking the infiltration of hydrogen, the hysteresis characteristics of the ferroelectric materials can be preserved.

REFERENCES:
patent: 4914497 (1990-04-01), Kondo
patent: 5212620 (1993-05-01), Evans et al.
patent: 5302843 (1994-04-01), Yamazaki
patent: 5403763 (1995-04-01), Yamazaki
patent: 5464786 (1995-11-01), Figura et al.
patent: 5504041 (1996-04-01), Summerfelt
patent: 5877062 (1999-03-01), Horii
patent: 5994153 (1999-11-01), Nagel et al.
patent: 6054332 (2000-04-01), Cho
patent: 6084765 (2000-07-01), Lee
patent: 6130124 (2000-10-01), Lee
patent: 6144060 (2000-11-01), Park et al.
patent: 6168990 (2001-01-01), Kim
patent: 6175127 (2001-01-01), Hong
patent: 6180447 (2001-01-01), Park et al.
patent: 6204105 (2001-03-01), Jung
patent: 6229171 (2001-05-01), Chun et al.
patent: 6232133 (2001-05-01), Kim et al.
patent: 6236063 (2001-05-01), Yamazaki et al.
patent: 6319769 (2001-11-01), Cho
patent: 6509601 (2003-01-01), Lee et al.
patent: 6603169 (2003-08-01), Lee
patent: 6605835 (2003-08-01), Lee
patent: 6614060 (2003-09-01), Wang et al.
patent: 6656748 (2003-12-01), Hall et al.
patent: 6713342 (2004-03-01), Celii et al.
patent: 6767750 (2004-07-01), Summerfelt et al.
patent: 6773930 (2004-08-01), Summerfelt et al.
patent: 2003/0211687 (2003-11-01), Lee
patent: 11-64718 (1999-02-01), None
patent: 1999-012976 (1999-02-01), None
Notice to Submit Response, Korean Application No. 10-2000-0079189, Sep. 19, 2002.

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