Methods of fabricating flash memory devices having self...

Details Methods of fabricating flash memory devices having self... Methods of fabricating flash memory devices having self...

2006-05-09

2006-05-09

Pham, Long (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S263000, C438S264000, C438S424000

Reexamination Certificate

active

07041554

ABSTRACT:
Flash memory devices are provided including an integrated circuit substrate and a stack gate structure on the integrated circuit substrate. A trench isolation region is provided on the integrated circuit substrate adjacent the stack gate structure. A portion of the stack gate structure adjacent a trench sidewall of the trench isolation region may include a first nitrogen doped layer.

REFERENCES:
patent: 2002/0123234 (2002-09-01), Trapp
patent: 2003/0052376 (2003-03-01), Lee et al.
patent: 2003/0173615 (2003-09-01), San et al.
patent: 010061403 (2001-07-01), None

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