Multi-step magnetron sputtering process

Details Multi-step magnetron sputtering process Multi-step magnetron sputtering process

2006-01-31

2006-01-31

VerSteeg, Steven (Department: 1753)

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

C204S192150, C204S192220

Reexamination Certificate

active

06991709

ABSTRACT:
A multi-step sputtering process in plasma sputter reactor having target and magnetron operable in two modes, for example, in a substrate sputter etch and a substrate sputter deposition. The target has an annular vault facing the wafer to be sputter coated. Various types of magnetic means positioned around the vault create a magnetic field supporting a plasma extending over a large volume of the vault. An integrated copper via filling process with the inventive reactor or other reactor includes a first step of highly ionized sputter deposition of copper, which can optionally be used to remove the barrier layer at the bottom of the via, a second step of more neutral, lower-energy sputter deposition of copper to complete the seed layer, and a third step of electroplating copper into the hole to complete the metallization. The first two steps can be also used with barrier metals.

REFERENCES:
patent: 5985762 (1999-11-01), Geffken et al.
patent: 6042700 (2000-03-01), Gopalraja et al.
patent: 6642146 (2003-11-01), Rozbicki et al.
patent: 6787006 (2004-09-01), Gopalraja et al.

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