Method of manufacturing a semiconductor device

Details Method of manufacturing a semiconductor device Method of manufacturing a semiconductor device

2006-01-31

2006-01-31

Chaudhari, Chandra (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S287000

Reexamination Certificate

active

06991985

ABSTRACT:
Disclosed is a method of manufacturing a semiconductor device. A floating gate is formed and a nitrification process is then implemented. With the disclosed process, it is possible to improve the roughness of the top surface of the floating gate electrode. Furthermore, a nitrification process and a dielectric film formation process are implemented in-situ, which simplifies the manufacturing process.

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Office Action from the R.O.C. (Taiwan) Intellectual Property Office dated Mar. 18, 2005 (9 pages).
Office Action from the Korean Intellectual Property Office dated Jun. 7, 2005 (2 pages).

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