Service programmable logic arrays with low tunnel barrier...

Details Service programmable logic arrays with low tunnel barrier... Service programmable logic arrays with low tunnel barrier...

2006-07-11

2006-07-11

Baumeister, B. William (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S259000, C438S216000, C438S593000, C438S592000, C438S791000, C438S264000

Reexamination Certificate

active

07074673

ABSTRACT:
Structures and methods for in service programmable logic arrays with low tunnel barrier interpoly insulators are provided. The in-service programmable logic array includes a first logic and a second logic plan having a number of logic cells arranged in rows and columns that are interconnected to produce a number of logical outputs such that the in service programmable logic array implements a logical function. The logic cell includes a first source/drain region and a second source/drain region separated by a channel region in a substrate. A floating gate opposing the channel region and is separated therefrom by a gate oxide. A control gate opposes the floating gate. The control gate is separated from the floating gate by a low tunnel barrier intergate insulator. The low tunnel barrier intergate insulator includes a metal oxide insulator selected from the group consisting of PbO, Al2O3, Ta2O5, TiO2, ZrO2, Nb2O5and/or a Perovskite oxide tunnel barrier.

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