Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-01-24
2006-01-24
Whitehead, Jr., Carl (Department: 2813)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S223000, C438S229000, C438S213000
Reexamination Certificate
active
06989302
ABSTRACT:
The present invention provides, in one embodiment, a method of fabricating a semiconductor device (100). The method comprises exposing a portion (125) of an n-type substrate (105) to an arsenic dimer (130). The method also includes forming a p-type lightly doped drain (LDD) region (145) within the portion of the n-type substrate (125). Other embodiments advantageously incorporate the method into methods for making PMOS devices.
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Kordick Alan L.
Makovicka Tim J.
Brady III W. James
Huynh Yennhu B
Jr. Carl Whitehead
McLarty Peter K.
Telecky , Jr. Frederick J.
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